HIGH QUALITY GROWTH AND ADHESION ENERGY MEASUREMENT OF BILAYER GRAPHENE ON SAPPHIRE
Kenneth LiechtiGrand Ballroom A
One bottleneck in integrating graphene in the next generation of microelectronics devices is the efficient and effective transfer of graphene from its growth substrate to the substrate that is targeted for device fabrication. Dry transfer offers the potential for a relatively fast manufacturing process with minimal contamination of and damage to graphene. The paper describes the development of a chemical vapor deposition process for growing graphene on sapphire rather metal. It also demonstrates that graphene can be dry transferred to another substrate via a polymer carrier by exploiting rate and mode-mix dependent interfacial fracture.
University of Texas Austin, United States of America
Wed 17:20 - 17:40
Microstructures and Fracture in Advanced Materials